Alkoash, Abed Alkhem

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  • Alkoash, Abed Alkhem (3)
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Author's Bibliography

4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance

Abood, Imhammad; Lukić, Petar M.; Šašić, Rajko; Alkoash, Abed Alkhem; Ostojić, Stanko M.

(Natl Inst Optoelectronics, Bucharest-Magurele, 2013) 

TY  - JOUR
AU  - Abood, Imhammad
AU  - Lukić, Petar M.
AU  - Šašić, Rajko
AU  - Alkoash, Abed Alkhem
AU  - Ostojić, Stanko M.
PY  - 2013
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2417
AB  - 4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Optoelectronics and Advanced Materials-Rapid Communications
T1  - 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance
EP  - 333
IS  - 5-6
SP  - 329
VL  - 7
UR  - https://hdl.handle.net/21.15107/rcub_technorep_2417
ER  - 
@article{
author = "Abood, Imhammad and Lukić, Petar M. and Šašić, Rajko and Alkoash, Abed Alkhem and Ostojić, Stanko M.",
year = "2013",
abstract = "4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Optoelectronics and Advanced Materials-Rapid Communications",
title = "4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance",
pages = "333-329",
number = "5-6",
volume = "7",
url = "https://hdl.handle.net/21.15107/rcub_technorep_2417"
}
Abood, I., Lukić, P. M., Šašić, R., Alkoash, A. A.,& Ostojić, S. M.. (2013). 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance. in Optoelectronics and Advanced Materials-Rapid Communications
Natl Inst Optoelectronics, Bucharest-Magurele., 7(5-6), 329-333.
https://hdl.handle.net/21.15107/rcub_technorep_2417
Abood I, Lukić PM, Šašić R, Alkoash AA, Ostojić SM. 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance. in Optoelectronics and Advanced Materials-Rapid Communications. 2013;7(5-6):329-333.
https://hdl.handle.net/21.15107/rcub_technorep_2417 .
Abood, Imhammad, Lukić, Petar M., Šašić, Rajko, Alkoash, Abed Alkhem, Ostojić, Stanko M., "4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance" in Optoelectronics and Advanced Materials-Rapid Communications, 7, no. 5-6 (2013):329-333,
https://hdl.handle.net/21.15107/rcub_technorep_2417 .
1

An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs

Alkoash, Abed Alkhem; Šašić, Rajko; Ostojić, Stanko M.; Lukić, Petar M.

(Amer Scientific Publishers, Stevenson Ranch, 2011) 

TY  - JOUR
AU  - Alkoash, Abed Alkhem
AU  - Šašić, Rajko
AU  - Ostojić, Stanko M.
AU  - Lukić, Petar M.
PY  - 2011
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1956
AB  - The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.
PB  - Amer Scientific Publishers, Stevenson Ranch
T2  - Journal of Computational and Theoretical Nanoscience
T1  - An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs
EP  - 50
IS  - 1
SP  - 47
VL  - 8
DO  - 10.1166/jctn.2011.1657
ER  - 
@article{
author = "Alkoash, Abed Alkhem and Šašić, Rajko and Ostojić, Stanko M. and Lukić, Petar M.",
year = "2011",
abstract = "The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.",
publisher = "Amer Scientific Publishers, Stevenson Ranch",
journal = "Journal of Computational and Theoretical Nanoscience",
title = "An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs",
pages = "50-47",
number = "1",
volume = "8",
doi = "10.1166/jctn.2011.1657"
}
Alkoash, A. A., Šašić, R., Ostojić, S. M.,& Lukić, P. M.. (2011). An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs. in Journal of Computational and Theoretical Nanoscience
Amer Scientific Publishers, Stevenson Ranch., 8(1), 47-50.
https://doi.org/10.1166/jctn.2011.1657
Alkoash AA, Šašić R, Ostojić SM, Lukić PM. An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs. in Journal of Computational and Theoretical Nanoscience. 2011;8(1):47-50.
doi:10.1166/jctn.2011.1657 .
Alkoash, Abed Alkhem, Šašić, Rajko, Ostojić, Stanko M., Lukić, Petar M., "An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs" in Journal of Computational and Theoretical Nanoscience, 8, no. 1 (2011):47-50,
https://doi.org/10.1166/jctn.2011.1657 . .
1
4
4

The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs

Šašić, Rajko; Lukić, Petar M.; Ostojić, Stanko M.; Alkoash, Abed Alkhem

(Natl Inst Optoelectronics, Bucharest-Magurele, 2010) 

TY  - JOUR
AU  - Šašić, Rajko
AU  - Lukić, Petar M.
AU  - Ostojić, Stanko M.
AU  - Alkoash, Abed Alkhem
PY  - 2010
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1581
AB  - The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs
EP  - 1164
IS  - 5
SP  - 1161
VL  - 12
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1581
ER  - 
@article{
author = "Šašić, Rajko and Lukić, Petar M. and Ostojić, Stanko M. and Alkoash, Abed Alkhem",
year = "2010",
abstract = "The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs",
pages = "1164-1161",
number = "5",
volume = "12",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1581"
}
Šašić, R., Lukić, P. M., Ostojić, S. M.,& Alkoash, A. A.. (2010). The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 12(5), 1161-1164.
https://hdl.handle.net/21.15107/rcub_technorep_1581
Šašić R, Lukić PM, Ostojić SM, Alkoash AA. The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials. 2010;12(5):1161-1164.
https://hdl.handle.net/21.15107/rcub_technorep_1581 .
Šašić, Rajko, Lukić, Petar M., Ostojić, Stanko M., Alkoash, Abed Alkhem, "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs" in Journal of Optoelectronics and Advanced Materials, 12, no. 5 (2010):1161-1164,
https://hdl.handle.net/21.15107/rcub_technorep_1581 .
1