TY  - JOUR
AU  - Lukić, Petar M.
AU  - Šašić, Rajko
AU  - Lončar, Boris
AU  - Zunjić, A. G.
PY  - 2011
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1945
AB  - This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and its impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ones..
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Optoelectronics and Advanced Materials-Rapid Communications
T1  - Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics
EP  - 554
IS  - 5-6
SP  - 551
VL  - 5
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1945
ER  - 

@article{
author = "Lukić, Petar M. and Šašić, Rajko and Lončar, Boris and Zunjić, A. G.",
year = "2011",
abstract = "This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and its impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ones..",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Optoelectronics and Advanced Materials-Rapid Communications",
title = "Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics",
pages = "554-551",
number = "5-6",
volume = "5",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1945"
}

Lukić, P. M., Šašić, R., Lončar, B.,& Zunjić, A. G.. (2011). Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics. in Optoelectronics and Advanced Materials-Rapid Communications
Natl Inst Optoelectronics, Bucharest-Magurele., 5(5-6), 551-554.
https://hdl.handle.net/21.15107/rcub_technorep_1945

Lukić PM, Šašić R, Lončar B, Zunjić AG. Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics. in Optoelectronics and Advanced Materials-Rapid Communications. 2011;5(5-6):551-554.
https://hdl.handle.net/21.15107/rcub_technorep_1945 .

Lukić, Petar M., Šašić, Rajko, Lončar, Boris, Zunjić, A. G., "Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics" in Optoelectronics and Advanced Materials-Rapid Communications, 5, no. 5-6 (2011):551-554,
https://hdl.handle.net/21.15107/rcub_technorep_1945 .