TY  - JOUR
AU  - Ostojić, Stanko M.
AU  - Šašić, Rajko
AU  - Lukić, Petar M.
AU  - Abood, Imhimmad
PY  - 2014
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2696
AB  - Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.
PB  - IOP Publishing Ltd, Bristol
T2  - Physica Scripta
T1  - Surrounding gate long channel nanowire MOSFET modelling-extended analysis
IS  - 11
VL  - 89
DO  - 10.1088/0031-8949/89/11/115802
ER  - 

@article{
author = "Ostojić, Stanko M. and Šašić, Rajko and Lukić, Petar M. and Abood, Imhimmad",
year = "2014",
abstract = "Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Physica Scripta",
title = "Surrounding gate long channel nanowire MOSFET modelling-extended analysis",
number = "11",
volume = "89",
doi = "10.1088/0031-8949/89/11/115802"
}

Ostojić, S. M., Šašić, R., Lukić, P. M.,& Abood, I.. (2014). Surrounding gate long channel nanowire MOSFET modelling-extended analysis. in Physica Scripta
IOP Publishing Ltd, Bristol., 89(11).
https://doi.org/10.1088/0031-8949/89/11/115802

Ostojić SM, Šašić R, Lukić PM, Abood I. Surrounding gate long channel nanowire MOSFET modelling-extended analysis. in Physica Scripta. 2014;89(11).
doi:10.1088/0031-8949/89/11/115802 .

Ostojić, Stanko M., Šašić, Rajko, Lukić, Petar M., Abood, Imhimmad, "Surrounding gate long channel nanowire MOSFET modelling-extended analysis" in Physica Scripta, 89, no. 11 (2014),
https://doi.org/10.1088/0031-8949/89/11/115802 . .

TY  - JOUR
AU  - Abood, Imhimmad
AU  - Šašić, Rajko
AU  - Ostojić, Stanko M.
AU  - Lukić, Petar M.
PY  - 2013
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2396
AB  - Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.
PB  - IOP Publishing Ltd, Bristol
T2  - Japanese Journal of Applied Physics
T1  - Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
IS  - 9
VL  - 52
DO  - 10.7567/JJAP.52.094302
ER  - 

@article{
author = "Abood, Imhimmad and Šašić, Rajko and Ostojić, Stanko M. and Lukić, Petar M.",
year = "2013",
abstract = "Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Japanese Journal of Applied Physics",
title = "Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy",
number = "9",
volume = "52",
doi = "10.7567/JJAP.52.094302"
}

Abood, I., Šašić, R., Ostojić, S. M.,& Lukić, P. M.. (2013). Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy. in Japanese Journal of Applied Physics
IOP Publishing Ltd, Bristol., 52(9).
https://doi.org/10.7567/JJAP.52.094302

Abood I, Šašić R, Ostojić SM, Lukić PM. Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy. in Japanese Journal of Applied Physics. 2013;52(9).
doi:10.7567/JJAP.52.094302 .

Abood, Imhimmad, Šašić, Rajko, Ostojić, Stanko M., Lukić, Petar M., "Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy" in Japanese Journal of Applied Physics, 52, no. 9 (2013),
https://doi.org/10.7567/JJAP.52.094302 . .