Djurić, Stevan

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  • Djurić, Stevan (1)
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Author's Bibliography

The growth of sapphire single crystals

Golubović, Aleksandar; Nikolić, Slobodanka; Djurić, Stevan; Valčić, Andreja

(Serbian Chemical Society, 2001)

TY  - JOUR
AU  - Golubović, Aleksandar
AU  - Nikolić, Slobodanka
AU  - Djurić, Stevan
AU  - Valčić, Andreja
PY  - 2001
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5363
AB  - Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. A critical crystal diameter dc = 20 mm and the critical rate of rotation ωc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to cone. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to cone. H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.
PB  - Serbian Chemical Society
T2  - Journal of the Serbian Chemical Society
T1  - The growth of sapphire single crystals
EP  - 418
IS  - 6
SP  - 411
VL  - 66
DO  - 10.2298/jsc0106411g
ER  - 
@article{
author = "Golubović, Aleksandar and Nikolić, Slobodanka and Djurić, Stevan and Valčić, Andreja",
year = "2001",
abstract = "Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. A critical crystal diameter dc = 20 mm and the critical rate of rotation ωc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to cone. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to cone. H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.",
publisher = "Serbian Chemical Society",
journal = "Journal of the Serbian Chemical Society",
title = "The growth of sapphire single crystals",
pages = "418-411",
number = "6",
volume = "66",
doi = "10.2298/jsc0106411g"
}
Golubović, A., Nikolić, S., Djurić, S.,& Valčić, A.. (2001). The growth of sapphire single crystals. in Journal of the Serbian Chemical Society
Serbian Chemical Society., 66(6), 411-418.
https://doi.org/10.2298/jsc0106411g
Golubović A, Nikolić S, Djurić S, Valčić A. The growth of sapphire single crystals. in Journal of the Serbian Chemical Society. 2001;66(6):411-418.
doi:10.2298/jsc0106411g .
Golubović, Aleksandar, Nikolić, Slobodanka, Djurić, Stevan, Valčić, Andreja, "The growth of sapphire single crystals" in Journal of the Serbian Chemical Society, 66, no. 6 (2001):411-418,
https://doi.org/10.2298/jsc0106411g . .
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