TY  - JOUR
AU  - Gligorijević, Bojan
AU  - Schmidt, Harald
AU  - Radović, Nenad
AU  - Davidović, Milorad
AU  - Kutin, Marina
AU  - Janićijević, Aco
PY  - 2010
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1686
AB  - Amorphous polymer-derived Si-C-N ceramics can be doped with different elements (Al, B etc.) through various pre-ceramic polymer routes. Thus, controlling of the high temperature oxidation resistance can be achieved on an atomic level. An important factor for silica layer growth is oxygen diffusion in protective thermally grown layers. In order to get insight of the oxygen diffusion mechanism, analysis should include both, bulk and short-circuit diffusion. XRD measurements of oxidized Si-C-N and SiC revealed the possibility that oxide layers were fully crystallized and are composed of nano-sized cristobalite-like grains. Secondary ion mass spectrometry depth profile analysis after (18)O(2)-(16)O(2) isotope exchange experiments on oxidized SiC indicated that short-circuit diffusion is probably grain boundary diffusion of molecular oxygen.
PB  - World Scientific Publ Co Pte Ltd, Singapore
T2  - International Journal of Modern Physics B
T1  - Short-circuit oxygen diffusion in thermally grown silica layer
EP  - 694
IS  - 6-7
SP  - 682
VL  - 24
DO  - 10.1142/S0217979210064307
ER  - 

@article{
author = "Gligorijević, Bojan and Schmidt, Harald and Radović, Nenad and Davidović, Milorad and Kutin, Marina and Janićijević, Aco",
year = "2010",
abstract = "Amorphous polymer-derived Si-C-N ceramics can be doped with different elements (Al, B etc.) through various pre-ceramic polymer routes. Thus, controlling of the high temperature oxidation resistance can be achieved on an atomic level. An important factor for silica layer growth is oxygen diffusion in protective thermally grown layers. In order to get insight of the oxygen diffusion mechanism, analysis should include both, bulk and short-circuit diffusion. XRD measurements of oxidized Si-C-N and SiC revealed the possibility that oxide layers were fully crystallized and are composed of nano-sized cristobalite-like grains. Secondary ion mass spectrometry depth profile analysis after (18)O(2)-(16)O(2) isotope exchange experiments on oxidized SiC indicated that short-circuit diffusion is probably grain boundary diffusion of molecular oxygen.",
publisher = "World Scientific Publ Co Pte Ltd, Singapore",
journal = "International Journal of Modern Physics B",
title = "Short-circuit oxygen diffusion in thermally grown silica layer",
pages = "694-682",
number = "6-7",
volume = "24",
doi = "10.1142/S0217979210064307"
}

Gligorijević, B., Schmidt, H., Radović, N., Davidović, M., Kutin, M.,& Janićijević, A.. (2010). Short-circuit oxygen diffusion in thermally grown silica layer. in International Journal of Modern Physics B
World Scientific Publ Co Pte Ltd, Singapore., 24(6-7), 682-694.
https://doi.org/10.1142/S0217979210064307

Gligorijević B, Schmidt H, Radović N, Davidović M, Kutin M, Janićijević A. Short-circuit oxygen diffusion in thermally grown silica layer. in International Journal of Modern Physics B. 2010;24(6-7):682-694.
doi:10.1142/S0217979210064307 .

Gligorijević, Bojan, Schmidt, Harald, Radović, Nenad, Davidović, Milorad, Kutin, Marina, Janićijević, Aco, "Short-circuit oxygen diffusion in thermally grown silica layer" in International Journal of Modern Physics B, 24, no. 6-7 (2010):682-694,
https://doi.org/10.1142/S0217979210064307 . .