Analytical model of CNT FET current-voltage characteristics
Само за регистроване кориснике
2012
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones.
Кључне речи:
CNT FET / Current - voltage characteristics / Analytical modelИзвор:
Journal of Optoelectronics and Advanced Materials, 2012, 14, 1-2, 176-182Издавач:
- Natl Inst Optoelectronics, Bucharest-Magurele
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Vasić, Dušan B. AU - Lukić, Petar M. AU - Lukić, Vladan M. AU - Šašić, Rajko PY - 2012 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1980 AB - In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Journal of Optoelectronics and Advanced Materials T1 - Analytical model of CNT FET current-voltage characteristics EP - 182 IS - 1-2 SP - 176 VL - 14 UR - https://hdl.handle.net/21.15107/rcub_technorep_1980 ER -
@article{ author = "Vasić, Dušan B. and Lukić, Petar M. and Lukić, Vladan M. and Šašić, Rajko", year = "2012", abstract = "In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones.", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Journal of Optoelectronics and Advanced Materials", title = "Analytical model of CNT FET current-voltage characteristics", pages = "182-176", number = "1-2", volume = "14", url = "https://hdl.handle.net/21.15107/rcub_technorep_1980" }
Vasić, D. B., Lukić, P. M., Lukić, V. M.,& Šašić, R.. (2012). Analytical model of CNT FET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials Natl Inst Optoelectronics, Bucharest-Magurele., 14(1-2), 176-182. https://hdl.handle.net/21.15107/rcub_technorep_1980
Vasić DB, Lukić PM, Lukić VM, Šašić R. Analytical model of CNT FET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials. 2012;14(1-2):176-182. https://hdl.handle.net/21.15107/rcub_technorep_1980 .
Vasić, Dušan B., Lukić, Petar M., Lukić, Vladan M., Šašić, Rajko, "Analytical model of CNT FET current-voltage characteristics" in Journal of Optoelectronics and Advanced Materials, 14, no. 1-2 (2012):176-182, https://hdl.handle.net/21.15107/rcub_technorep_1980 .