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dc.creatorShen, Weining
dc.creatorDunn, Bruce
dc.creatorRagot, F.
dc.creatorGoorsky, Mark
dc.creatorMoore, Caroline
dc.creatorSong, David W.
dc.creatorChen, Gang
dc.creatorGronsky, Ronald
dc.creatorRadetić, Tamara
dc.creatorFuller-Mora, Wendy
dc.creatorEhrlich, Alexander
dc.date.accessioned2024-02-27T10:10:03Z
dc.date.available2024-02-27T10:10:03Z
dc.date.issued1999
dc.identifier.isbn0-7803-5451-6
dc.identifier.issn1094-2734
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/7268
dc.description.abstractMetallorganic decomposition of metal carboxylates is used to prepare porous thin films of bismuth. The general approach is to spin coat a precursor solution, bismuth 2-ethylhexanoate in a solvent of 2-methyl-1-propanol on the substrate of interest and then pyrolyze the resulting film under conditions which evolve the organic ligands but do not melt the bismuth. The controlled release of ligands creates the nanoporous morphology which is then preserved in the final film. Subsequent plasma etching and heat treatments are used to produce films of variable porosity. The film microstructure consists of nanoporous channels separating grains of bismuth. For films in the range of 30% porosity, thermal conductivity values are on the order of 0.35 W/mK. The interrelationships among processing conditions, microstructure and thermal conductivity are discussed.sr
dc.language.isoensr
dc.publisherIEEEsr
dc.relationDOD/ONR MURI program on thermoelectrics (N00014-97-1-0516)sr
dc.rightsrestrictedAccesssr
dc.sourceInternational Conference on Thermoelectrics, ICT, Proceedingssr
dc.subjectCoating techniquessr
dc.subjectCrystal microstructuresr
dc.subjectHeat treatmentsr
dc.subjectMethanolsr
dc.subjectMorphologysr
dc.subjectNanostructured materialssr
dc.subjectOrganic solventssr
dc.subjectPlasma etchingsr
dc.subjectPorositysr
dc.subjectSemiconducting bismuth compoundssr
dc.subjectThermal conductivity of solidssr
dc.subjectThin filmssr
dc.subjectLigandssr
dc.subjectMethyl propanolsr
dc.subjectNanoporositysr
dc.subjectSpin coatingsr
dc.subjectSemiconducting filmssr
dc.titleMicrostructure-property relations for porous bismuth filmssr
dc.typeconferenceObjectsr
dc.rights.licenseARRsr
dc.citation.epage564
dc.citation.spage562
dc.description.other18th International Conference on Thermoelectrics (ICT'99), 29 August 1999 through 2 September 1999sr
dc.identifier.doi10.1109/ict.1999.843452
dc.identifier.scopus2-s2.0-0033299888
dc.type.versionpublishedVersionsr


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