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Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel
(Proceedings of the fourth Yugoslav Materials Research Society Conference (YUCOMAT IV), 2002)
In this paper the influence of doping level in AlGaN and GaN on the carriers surface density in a channel of modulation doped field effect transistors (MODFETs) has been investigated. The carriers concentration profile in ...