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Surface carriers' concentration dynamics caused by a small alternating applied voltage
(Natl Inst Optoelectronics, Bucharest-Magurele, 2008)
One of our previous papers was devoted to threshold voltage in MOSFETs and MODFETs viewed as a problem of nonlinear dynamics. The behavior of surface carriers' concentration under D.C. (direct current) applied voltage has ...
TIMS and MALDI TOF of endohedral Li-n"C-70 (n=1-3) metallofullerenes
(Natl Inst Optoelectronics, Bucharest-Magurele, 2008)
Using the ion implantation technique (introducing negatively charged fullerene into a low temperature lithium plasma column by a strong axial magnetic field) endohedral fullerenes Li"C-70, Li-2"C-70 and Li-3"C-70 were ...
Electrodeposited hydroxyapatite thin films modified by ion beam irradiation
(Natl Inst Optoelectronics, Bucharest-Magurele, 2009)
Surface modification of hydroxyapatite (HA) thin films electrodeposited on titanium was conducted by ion implantation, using nitrogen and argon ions at different constant fluences of 1x10(15), 1x10(16) and 1x10(17) ions/cm(2). ...
Thermal stability of cordierite/silicon carbide composites after cyclic thermal shock
(Natl Inst Optoelectronics, Bucharest-Magurele, 2008)
In this paper composite material made from silicium carbide and cordierite was used in experiments. Behavior of the material in conditions of rapid temperature changes was investigated. Modified water quench test was applied ...