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Analytical model of electric field in heterojunction region of HFET structure
(Natl Inst Optoelectronics, Bucharest-Magurele, 2005)
A new analytical model of electric field in heterojunction region of heterostructure field effect transistor (HFET), is presented. Electric field dependences on surface density of two-dimensional electron gas and surface ...
New analytical HFET I-V characteristics model
(Natl Inst Optoelectronics, Bucharest-Magurele, 2006)
In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET ...