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Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance / Analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu sic mosfet strukture
(Savez inženjera i tehničara Srbije, Beograd, 2009)
In this paper, the results of investigation and modeling one of the most frequently used electron component - MOSFET (Metal Oxide Semiconductor Field Effect Transistor), made of SiC, are presented. At the begging, very ...