Conduction mechanism based model of organic field effect transistor structure
Апстракт
Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.
Кључне речи:
carrier mobility model / electrical characteristics / organic TFT model / simulationИзвор:
Materials Science Forum, 2007, 555, 125-130Издавач:
- 8th Conference of the Yugoslav Materials Research Society
DOI: 10.4028/0-87849-441-3.125
ISSN: 0255-5476
PubMed:
WoS: 000249653700019
Scopus: 2-s2.0-38349078604
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Šašić, Rajko AU - Lukić, Petar M. PY - 2007 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1012 AB - Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature. PB - 8th Conference of the Yugoslav Materials Research Society T2 - Materials Science Forum T1 - Conduction mechanism based model of organic field effect transistor structure EP - 130 SP - 125 VL - 555 DO - 10.4028/0-87849-441-3.125 ER -
@article{ author = "Šašić, Rajko and Lukić, Petar M.", year = "2007", abstract = "Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.", publisher = "8th Conference of the Yugoslav Materials Research Society", journal = "Materials Science Forum", title = "Conduction mechanism based model of organic field effect transistor structure", pages = "130-125", volume = "555", doi = "10.4028/0-87849-441-3.125" }
Šašić, R.,& Lukić, P. M.. (2007). Conduction mechanism based model of organic field effect transistor structure. in Materials Science Forum 8th Conference of the Yugoslav Materials Research Society., 555, 125-130. https://doi.org/10.4028/0-87849-441-3.125
Šašić R, Lukić PM. Conduction mechanism based model of organic field effect transistor structure. in Materials Science Forum. 2007;555:125-130. doi:10.4028/0-87849-441-3.125 .
Šašić, Rajko, Lukić, Petar M., "Conduction mechanism based model of organic field effect transistor structure" in Materials Science Forum, 555 (2007):125-130, https://doi.org/10.4028/0-87849-441-3.125 . .