Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics
Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC
Abstract
In this paper temperature dependence on current-voltage characteristics of a SiC based MOSFET structure is considered. This influence is modeled by introducing temperature impact on carrier's mobility. Proposed model includes electrical, technological and geometrical transitory parameters. The advantage of the exposed model is that it is simple and, at the same time comprehensive. The model is modular, thus it can be easily tested and eventually improved. By using the proposed model, simulations were performed. Obtained results are in a very good agreement with the already published ones.
U radu je razmatran uticaj temperature na strujno-naponske karakteristike MOSFET strukture izrađene na bazi SiC, koji je analitički modelovan kroz njen uticaj na pokretljivost nosilaca. Predloženi model pored uticaja temperature obuhvata i električne, tehnološke i geometrijske parametre tranzistora. Prednost izloženog modela je, što se pored sveobuhvatnosti, odlikuje i jednostavnošću. Model je modularan, tako da se lako može testirati, menjati i eventualno unaprediti. Na bazi predstavljenog modela izvršene su simulacije. Dobijeni rezultati su saglasni sa već poznatim i dostupnim u literaturi.
Keywords:
MOSFET / SiC / analytical model / current-voltage characteristic / carrier's mobility / MOSFET / SiC / analitički model / strujno-naponska karakteristika / pokretljivost nosilacaSource:
Tehnika - Novi materijali, 2007, 16, 2, 1-6Publisher:
- Savez inženjera i tehničara Srbije, Beograd
Institution/Community
Tehnološko-metalurški fakultetTY - JOUR AU - Haber, Aleksandar M. AU - Lukić, Petar M. AU - Šašić, Rajko PY - 2007 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1191 AB - In this paper temperature dependence on current-voltage characteristics of a SiC based MOSFET structure is considered. This influence is modeled by introducing temperature impact on carrier's mobility. Proposed model includes electrical, technological and geometrical transitory parameters. The advantage of the exposed model is that it is simple and, at the same time comprehensive. The model is modular, thus it can be easily tested and eventually improved. By using the proposed model, simulations were performed. Obtained results are in a very good agreement with the already published ones. AB - U radu je razmatran uticaj temperature na strujno-naponske karakteristike MOSFET strukture izrađene na bazi SiC, koji je analitički modelovan kroz njen uticaj na pokretljivost nosilaca. Predloženi model pored uticaja temperature obuhvata i električne, tehnološke i geometrijske parametre tranzistora. Prednost izloženog modela je, što se pored sveobuhvatnosti, odlikuje i jednostavnošću. Model je modularan, tako da se lako može testirati, menjati i eventualno unaprediti. Na bazi predstavljenog modela izvršene su simulacije. Dobijeni rezultati su saglasni sa već poznatim i dostupnim u literaturi. PB - Savez inženjera i tehničara Srbije, Beograd T2 - Tehnika - Novi materijali T1 - Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics T1 - Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC EP - 6 IS - 2 SP - 1 VL - 16 UR - https://hdl.handle.net/21.15107/rcub_technorep_1191 ER -
@article{ author = "Haber, Aleksandar M. and Lukić, Petar M. and Šašić, Rajko", year = "2007", abstract = "In this paper temperature dependence on current-voltage characteristics of a SiC based MOSFET structure is considered. This influence is modeled by introducing temperature impact on carrier's mobility. Proposed model includes electrical, technological and geometrical transitory parameters. The advantage of the exposed model is that it is simple and, at the same time comprehensive. The model is modular, thus it can be easily tested and eventually improved. By using the proposed model, simulations were performed. Obtained results are in a very good agreement with the already published ones., U radu je razmatran uticaj temperature na strujno-naponske karakteristike MOSFET strukture izrađene na bazi SiC, koji je analitički modelovan kroz njen uticaj na pokretljivost nosilaca. Predloženi model pored uticaja temperature obuhvata i električne, tehnološke i geometrijske parametre tranzistora. Prednost izloženog modela je, što se pored sveobuhvatnosti, odlikuje i jednostavnošću. Model je modularan, tako da se lako može testirati, menjati i eventualno unaprediti. Na bazi predstavljenog modela izvršene su simulacije. Dobijeni rezultati su saglasni sa već poznatim i dostupnim u literaturi.", publisher = "Savez inženjera i tehničara Srbije, Beograd", journal = "Tehnika - Novi materijali", title = "Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics, Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC", pages = "6-1", number = "2", volume = "16", url = "https://hdl.handle.net/21.15107/rcub_technorep_1191" }
Haber, A. M., Lukić, P. M.,& Šašić, R.. (2007). Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics. in Tehnika - Novi materijali Savez inženjera i tehničara Srbije, Beograd., 16(2), 1-6. https://hdl.handle.net/21.15107/rcub_technorep_1191
Haber AM, Lukić PM, Šašić R. Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics. in Tehnika - Novi materijali. 2007;16(2):1-6. https://hdl.handle.net/21.15107/rcub_technorep_1191 .
Haber, Aleksandar M., Lukić, Petar M., Šašić, Rajko, "Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics" in Tehnika - Novi materijali, 16, no. 2 (2007):1-6, https://hdl.handle.net/21.15107/rcub_technorep_1191 .