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dc.creatorŠašić, Rajko
dc.creatorLukić, Petar M.
dc.creatorOstojić, Stanko M.
dc.creatorAlkoash, Abed Alkhem
dc.date.accessioned2021-03-10T11:15:11Z
dc.date.available2021-03-10T11:15:11Z
dc.date.issued2010
dc.identifier.issn1454-4164
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/1581
dc.description.abstractThe previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.en
dc.publisherNatl Inst Optoelectronics, Bucharest-Magurele
dc.relationSerbian Ministry of Science and Technological Development
dc.rightsrestrictedAccess
dc.sourceJournal of Optoelectronics and Advanced Materials
dc.subjectAnalytical modelen
dc.subjectSpatial carriers distributionen
dc.subjectSurrounding-gate MOSFETen
dc.subjectQuantum effectsen
dc.subjectTransport equationen
dc.titleThe influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETsen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage1164
dc.citation.issue5
dc.citation.other12(5): 1161-1164
dc.citation.rankM23
dc.citation.spage1161
dc.citation.volume12
dc.identifier.rcubconv_3413
dc.identifier.wos000279165400031
dc.type.versionpublishedVersion


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