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The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs
dc.creator | Šašić, Rajko | |
dc.creator | Lukić, Petar M. | |
dc.creator | Ostojić, Stanko M. | |
dc.creator | Alkoash, Abed Alkhem | |
dc.date.accessioned | 2021-03-10T11:15:11Z | |
dc.date.available | 2021-03-10T11:15:11Z | |
dc.date.issued | 2010 | |
dc.identifier.issn | 1454-4164 | |
dc.identifier.uri | http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1581 | |
dc.description.abstract | The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters. | en |
dc.publisher | Natl Inst Optoelectronics, Bucharest-Magurele | |
dc.relation | Serbian Ministry of Science and Technological Development | |
dc.rights | restrictedAccess | |
dc.source | Journal of Optoelectronics and Advanced Materials | |
dc.subject | Analytical model | en |
dc.subject | Spatial carriers distribution | en |
dc.subject | Surrounding-gate MOSFET | en |
dc.subject | Quantum effects | en |
dc.subject | Transport equation | en |
dc.title | The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs | en |
dc.type | article | |
dc.rights.license | ARR | |
dc.citation.epage | 1164 | |
dc.citation.issue | 5 | |
dc.citation.other | 12(5): 1161-1164 | |
dc.citation.rank | M23 | |
dc.citation.spage | 1161 | |
dc.citation.volume | 12 | |
dc.identifier.rcub | https://hdl.handle.net/21.15107/rcub_technorep_1581 | |
dc.identifier.wos | 000279165400031 | |
dc.type.version | publishedVersion |
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