Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics

Abstract

This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and its impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ones..