In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones.
Keywords:
CNT FET / Current - voltage characteristics / Analytical model
Source:
Journal of Optoelectronics and Advanced Materials, 2012, 14, 1-2, 176-182
TY - JOUR
AU - Vasić, Dušan B.
AU - Lukić, Petar M.
AU - Lukić, Vladan M.
AU - Šašić, Rajko
PY - 2012
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1980
AB - In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones.
PB - Natl Inst Optoelectronics, Bucharest-Magurele
T2 - Journal of Optoelectronics and Advanced Materials
T1 - Analytical model of CNT FET current-voltage characteristics
EP - 182
IS - 1-2
SP - 176
VL - 14
ER -
@article{
author = "Vasić, Dušan B. and Lukić, Petar M. and Lukić, Vladan M. and Šašić, Rajko",
year = "2012",
url = "http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1980",
abstract = "In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Analytical model of CNT FET current-voltage characteristics",
pages = "182-176",
number = "1-2",
volume = "14"
}
Vasić, D. B., Lukić, P. M., Lukić, V. M.,& Šašić, R. (2012). Analytical model of CNT FET current-voltage characteristics.
Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 14(1-2), 176-182.
Vasić DB, Lukić PM, Lukić VM, Šašić R. Analytical model of CNT FET current-voltage characteristics. Journal of Optoelectronics and Advanced Materials. 2012;14(1-2):176-182
Vasić Dušan B., Lukić Petar M., Lukić Vladan M., Šašić Rajko, "Analytical model of CNT FET current-voltage characteristics" Journal of Optoelectronics and Advanced Materials, 14, no. 1-2 (2012):176-182
