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dc.creatorRamović, Rifat M.
dc.creatorŠašić, Rajko
dc.creatorAndrin, R
dc.date.accessioned2021-03-10T09:46:08Z
dc.date.available2021-03-10T09:46:08Z
dc.date.issued1998
dc.identifier.issn1012-0394
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/209
dc.description.abstractThis paper presents the 2D model of the pseudomorphic InGaAs/InAlAs/InGaAs HEMT (High Electron Mobility Transistor) structure based on relevant physics. Together with parameters governed by the geometry and the producing technology of the device, it also takes into account the parasitic resistances of source and drain terminals and the influence of temperature on its operation. This fact makes the suggested model more general and more complete than previous ones. The corresponding numerical procedure for the determination of electric field and potential, as well as the transfer and output characteristics of the structure, has been designed and its simulation performed.en
dc.publisherTrans Tech-Scitec Publications Ltd, Durnten-Zurich
dc.rightsrestrictedAccess
dc.sourceSolid State Phenomena
dc.subjectheterostructureen
dc.subjectHEMTen
dc.subjectpseudomorphic modellingen
dc.subjectsimulationen
dc.title2D model of pseudomorphic InGaAs/InAlAs HEMT's structureen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage210
dc.citation.other61-2: 207-210
dc.citation.spage207
dc.citation.volume61-2
dc.identifier.doi10.4028/www.scientific.net/SSP.61-62.207
dc.identifier.rcubconv_1908
dc.identifier.wos000075589100037
dc.type.versionpublishedVersion


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