2D model of pseudomorphic InGaAs/InAlAs HEMT's structure

Abstract

This paper presents the 2D model of the pseudomorphic InGaAs/InAlAs/InGaAs HEMT (High Electron Mobility Transistor) structure based on relevant physics. Together with parameters governed by the geometry and the producing technology of the device, it also takes into account the parasitic resistances of source and drain terminals and the influence of temperature on its operation. This fact makes the suggested model more general and more complete than previous ones. The corresponding numerical procedure for the determination of electric field and potential, as well as the transfer and output characteristics of the structure, has been designed and its simulation performed.