Comparative analysis of influence of gamma radiation on programmable memory characteristics
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2012
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
The aim of this paper is to examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components subjected to the influence of gamma radiation. This problem is of considerable significance for both military industry and space technology. We present total dose results for the NM27C512 8F85 EPROM and M24128 - B W BN 5 T P EEPROM components. There is evidence that EPROM components radioactive reliability is better than that of EEPROM components. Furthermore, the changes EPROM's undergoes are reversible, so that after erasing process and reprogramming all EPROM components are fully functional. On the other hand, EEPROM's changes are irreversible and when subjected to the influence of gamma radiation, all EEPROM components become permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers.
Ključne reči:
EPROM / EEPROM / reliability / gamma radiationIzvor:
Radiation Effects and Defects in Solids, 2012, 167, 12, 903-912Izdavač:
- Taylor & Francis Ltd, Abingdon
Finansiranje / projekti:
- Fizički i funkcionalni efekti interakcije zračenja sa elektrotehničkim i biološkim sistemima (RS-171007)
- Astroinformatika: primena IT u astronomiji i srodnim disciplinama (RS-44002)
DOI: 10.1080/10420150.2012.727090
ISSN: 1042-0150
WoS: 000311788900003
Scopus: 2-s2.0-84870869648
Institucija/grupa
Tehnološko-metalurški fakultetTY - JOUR AU - Lončar, Boris AU - Kočinac, Saša PY - 2012 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2188 AB - The aim of this paper is to examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components subjected to the influence of gamma radiation. This problem is of considerable significance for both military industry and space technology. We present total dose results for the NM27C512 8F85 EPROM and M24128 - B W BN 5 T P EEPROM components. There is evidence that EPROM components radioactive reliability is better than that of EEPROM components. Furthermore, the changes EPROM's undergoes are reversible, so that after erasing process and reprogramming all EPROM components are fully functional. On the other hand, EEPROM's changes are irreversible and when subjected to the influence of gamma radiation, all EEPROM components become permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers. PB - Taylor & Francis Ltd, Abingdon T2 - Radiation Effects and Defects in Solids T1 - Comparative analysis of influence of gamma radiation on programmable memory characteristics EP - 912 IS - 12 SP - 903 VL - 167 DO - 10.1080/10420150.2012.727090 ER -
@article{ author = "Lončar, Boris and Kočinac, Saša", year = "2012", abstract = "The aim of this paper is to examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components subjected to the influence of gamma radiation. This problem is of considerable significance for both military industry and space technology. We present total dose results for the NM27C512 8F85 EPROM and M24128 - B W BN 5 T P EEPROM components. There is evidence that EPROM components radioactive reliability is better than that of EEPROM components. Furthermore, the changes EPROM's undergoes are reversible, so that after erasing process and reprogramming all EPROM components are fully functional. On the other hand, EEPROM's changes are irreversible and when subjected to the influence of gamma radiation, all EEPROM components become permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers.", publisher = "Taylor & Francis Ltd, Abingdon", journal = "Radiation Effects and Defects in Solids", title = "Comparative analysis of influence of gamma radiation on programmable memory characteristics", pages = "912-903", number = "12", volume = "167", doi = "10.1080/10420150.2012.727090" }
Lončar, B.,& Kočinac, S.. (2012). Comparative analysis of influence of gamma radiation on programmable memory characteristics. in Radiation Effects and Defects in Solids Taylor & Francis Ltd, Abingdon., 167(12), 903-912. https://doi.org/10.1080/10420150.2012.727090
Lončar B, Kočinac S. Comparative analysis of influence of gamma radiation on programmable memory characteristics. in Radiation Effects and Defects in Solids. 2012;167(12):903-912. doi:10.1080/10420150.2012.727090 .
Lončar, Boris, Kočinac, Saša, "Comparative analysis of influence of gamma radiation on programmable memory characteristics" in Radiation Effects and Defects in Solids, 167, no. 12 (2012):903-912, https://doi.org/10.1080/10420150.2012.727090 . .