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Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.
TY - JOUR
AU - Abood, Imhimmad
AU - Šašić, Rajko
AU - Ostojić, Stanko M.
AU - Lukić, Petar M.
PY - 2013
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2396
AB - Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.
PB - IOP Publishing Ltd, Bristol
T2 - Japanese Journal of Applied Physics
T1 - Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
IS - 9
VL - 52
DO - 10.7567/JJAP.52.094302
UR - conv_4209
ER -
@article{
author = "Abood, Imhimmad and Šašić, Rajko and Ostojić, Stanko M. and Lukić, Petar M.",
year = "2013",
abstract = "Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Japanese Journal of Applied Physics",
title = "Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy",
number = "9",
volume = "52",
doi = "10.7567/JJAP.52.094302",
url = "conv_4209"
}
Abood, I., Šašić, R., Ostojić, S. M.,& Lukić, P. M.. (2013). Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy. in Japanese Journal of Applied Physics
IOP Publishing Ltd, Bristol., 52(9).
https://doi.org/10.7567/JJAP.52.094302
conv_4209
Abood I, Šašić R, Ostojić SM, Lukić PM. Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy. in Japanese Journal of Applied Physics. 2013;52(9).
doi:10.7567/JJAP.52.094302
conv_4209 .
Abood, Imhimmad, Šašić, Rajko, Ostojić, Stanko M., Lukić, Petar M., "Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy" in Japanese Journal of Applied Physics, 52, no. 9 (2013),
https://doi.org/10.7567/JJAP.52.094302 .,
conv_4209 .
