Приказ основних података о документу

dc.creatorAbood, Imhimmad
dc.creatorŠašić, Rajko
dc.creatorOstojić, Stanko M.
dc.creatorLukić, Petar M.
dc.date.accessioned2021-03-10T12:07:23Z
dc.date.available2021-03-10T12:07:23Z
dc.date.issued2013
dc.identifier.issn0021-4922
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/2396
dc.description.abstractSilicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.en
dc.publisherIOP Publishing Ltd, Bristol
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45003/RS//
dc.rightsrestrictedAccess
dc.sourceJapanese Journal of Applied Physics
dc.titleAnalytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropyen
dc.typearticle
dc.rights.licenseARR
dc.citation.issue9
dc.citation.other52(9): -
dc.citation.rankM23
dc.citation.volume52
dc.identifier.doi10.7567/JJAP.52.094302
dc.identifier.scopus2-s2.0-84883889999
dc.identifier.wos000323884300028
dc.type.versionpublishedVersion


Документи

Thumbnail

Овај документ се појављује у следећим колекцијама

Приказ основних података о документу