In this work, single crystals of bismuth silicon oxide (BSO; Bi12SiO20) have been grown by the Czochralski method. The growth conditions were studied. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. The structure of the Bi12SiO20 has been investigated by x-ray diffraction (XRD), and Raman and Fourier transform infrared spectroscopy (FTIR) spectroscopy. The results obtained are discussed and compared with the published data. The pale yellow Bi12SiO20 single crystals prepared were without cores. Using spectroscopic measurements 19 Raman and 5 IR modes were observed.
TY - CONF
AU - Lazarević, Zorica Z.
AU - Kostić, S.
AU - Radojević, Vesna
AU - Romčević, Maja J.
AU - Gilić, Martina
AU - Petrović-Damjanović, M.
AU - Romčević, Nebojša Ž.
PY - 2013
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2459
AB - In this work, single crystals of bismuth silicon oxide (BSO; Bi12SiO20) have been grown by the Czochralski method. The growth conditions were studied. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. The structure of the Bi12SiO20 has been investigated by x-ray diffraction (XRD), and Raman and Fourier transform infrared spectroscopy (FTIR) spectroscopy. The results obtained are discussed and compared with the published data. The pale yellow Bi12SiO20 single crystals prepared were without cores. Using spectroscopic measurements 19 Raman and 5 IR modes were observed.
PB - IOP Publishing Ltd, Bristol
C3 - Physica Scripta
T1 - Raman spectroscopy of bismuth silicon oxide single crystals grown by the Czochralski technique
VL - T157
DO - 10.1088/0031-8949/2013/T157/014046
UR - conv_4371
ER -
@conference{
author = "Lazarević, Zorica Z. and Kostić, S. and Radojević, Vesna and Romčević, Maja J. and Gilić, Martina and Petrović-Damjanović, M. and Romčević, Nebojša Ž.",
year = "2013",
abstract = "In this work, single crystals of bismuth silicon oxide (BSO; Bi12SiO20) have been grown by the Czochralski method. The growth conditions were studied. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. The structure of the Bi12SiO20 has been investigated by x-ray diffraction (XRD), and Raman and Fourier transform infrared spectroscopy (FTIR) spectroscopy. The results obtained are discussed and compared with the published data. The pale yellow Bi12SiO20 single crystals prepared were without cores. Using spectroscopic measurements 19 Raman and 5 IR modes were observed.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Physica Scripta",
title = "Raman spectroscopy of bismuth silicon oxide single crystals grown by the Czochralski technique",
volume = "T157",
doi = "10.1088/0031-8949/2013/T157/014046",
url = "conv_4371"
}
Lazarević, Z. Z., Kostić, S., Radojević, V., Romčević, M. J., Gilić, M., Petrović-Damjanović, M.,& Romčević, N. Ž.. (2013). Raman spectroscopy of bismuth silicon oxide single crystals grown by the Czochralski technique. in Physica Scripta
IOP Publishing Ltd, Bristol., T157.
https://doi.org/10.1088/0031-8949/2013/T157/014046
conv_4371
Lazarević ZZ, Kostić S, Radojević V, Romčević MJ, Gilić M, Petrović-Damjanović M, Romčević NŽ. Raman spectroscopy of bismuth silicon oxide single crystals grown by the Czochralski technique. in Physica Scripta. 2013;T157.
doi:10.1088/0031-8949/2013/T157/014046
conv_4371 .
Lazarević, Zorica Z., Kostić, S., Radojević, Vesna, Romčević, Maja J., Gilić, Martina, Petrović-Damjanović, M., Romčević, Nebojša Ž., "Raman spectroscopy of bismuth silicon oxide single crystals grown by the Czochralski technique" in Physica Scripta, T157 (2013),
https://doi.org/10.1088/0031-8949/2013/T157/014046 .,
conv_4371 .
