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dc.creatorLukić, Petar M.
dc.creatorŠašić, Rajko
dc.date.accessioned2021-03-10T12:18:07Z
dc.date.available2021-03-10T12:18:07Z
dc.date.issued2014
dc.identifier.issn1454-4164
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/2564
dc.description.abstractIn this paper, field effect transistor with active area made of carbon nano tubes (CNT FET), is investigated. At the beginning, CNT characteristics, structure and possibilities of their implementation as a FET channel, are presented. The new model of CNT FET current-voltage characteristics is developed and presented. In the model, capacitances of all interfaces are included. Special segment of this model is carrier's mobility model. Modeling of carrier's mobility is exposed. Two different carriers' mobility models are presented: analytical model that is developed and proposed and empirical model that is introduced. All models are modular and relatively simple. The results obtained by using proposed models are in very good agreement with already known ones.en
dc.publisherNatl Inst Optoelectronics, Bucharest-Magurele
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45003/RS//
dc.rightsrestrictedAccess
dc.sourceJournal of Optoelectronics and Advanced Materials
dc.subjectCNT FETen
dc.subjectCarriers mobilityen
dc.subjectCurrent - voltage characteristicsen
dc.subjectAnalytical modelen
dc.titleModeling of carriers mobility impact on CNT FIET current-voltage characteristicsen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage1424
dc.citation.issue11-12
dc.citation.other16(11-12): 1418-1424
dc.citation.rankM23
dc.citation.spage1418
dc.citation.volume16
dc.identifier.pmid
dc.identifier.rcubconv_6513
dc.identifier.scopus2-s2.0-84920452465
dc.identifier.wos000347510000032
dc.type.versionpublishedVersion


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