Surrounding gate long channel nanowire MOSFET modelling-extended analysis
Abstract
Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.
Keywords:
nanowire / surrounding gate / mobility degradation / current-voltage characteristicsSource:
Physica Scripta, 2014, 89, 11Publisher:
- IOP Publishing Ltd, Bristol
Funding / projects:
- Optoelectronics nanodimension systems - the rout towards applications (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45003)
DOI: 10.1088/0031-8949/89/11/115802
ISSN: 0031-8949
WoS: 000346656500027
Scopus: 2-s2.0-84908539760
Institution/Community
Tehnološko-metalurški fakultetTY - JOUR AU - Ostojić, Stanko M. AU - Šašić, Rajko AU - Lukić, Petar M. AU - Abood, Imhimmad PY - 2014 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2696 AB - Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes. PB - IOP Publishing Ltd, Bristol T2 - Physica Scripta T1 - Surrounding gate long channel nanowire MOSFET modelling-extended analysis IS - 11 VL - 89 DO - 10.1088/0031-8949/89/11/115802 ER -
@article{ author = "Ostojić, Stanko M. and Šašić, Rajko and Lukić, Petar M. and Abood, Imhimmad", year = "2014", abstract = "Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.", publisher = "IOP Publishing Ltd, Bristol", journal = "Physica Scripta", title = "Surrounding gate long channel nanowire MOSFET modelling-extended analysis", number = "11", volume = "89", doi = "10.1088/0031-8949/89/11/115802" }
Ostojić, S. M., Šašić, R., Lukić, P. M.,& Abood, I.. (2014). Surrounding gate long channel nanowire MOSFET modelling-extended analysis. in Physica Scripta IOP Publishing Ltd, Bristol., 89(11). https://doi.org/10.1088/0031-8949/89/11/115802
Ostojić SM, Šašić R, Lukić PM, Abood I. Surrounding gate long channel nanowire MOSFET modelling-extended analysis. in Physica Scripta. 2014;89(11). doi:10.1088/0031-8949/89/11/115802 .
Ostojić, Stanko M., Šašić, Rajko, Lukić, Petar M., Abood, Imhimmad, "Surrounding gate long channel nanowire MOSFET modelling-extended analysis" in Physica Scripta, 89, no. 11 (2014), https://doi.org/10.1088/0031-8949/89/11/115802 . .