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dc.creatorOstojić, Stanko M.
dc.creatorŠašić, Rajko
dc.date.accessioned2021-03-10T13:15:02Z
dc.date.available2021-03-10T13:15:02Z
dc.date.issued2016
dc.identifier.issn1842-6573
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/3450
dc.description.abstractA simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.en
dc.publisherNatl Inst Optoelectronics, Bucharest-Magurele
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45003/RS//
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/43011/RS//
dc.rightsrestrictedAccess
dc.sourceOptoelectronics and Advanced Materials-Rapid Communications
dc.subjectSurrounding Gateen
dc.subjectNanowire MOSFETen
dc.subjectShort-Channelen
dc.subject2D Analysisen
dc.titleA simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFETen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage54
dc.citation.issue1-2
dc.citation.other10(1-2): 50-54
dc.citation.rankM23
dc.citation.spage50
dc.citation.volume10
dc.identifier.rcubconv_4972
dc.identifier.wos000374426400013
dc.type.versionpublishedVersion


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