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dc.creatorŠašić, Rajko
dc.creatorCevizović, D
dc.creatorRamović, Rifat M.
dc.date.accessioned2021-03-10T09:59:08Z
dc.date.available2021-03-10T09:59:08Z
dc.date.issued2002
dc.identifier.issn0255-5476
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/411
dc.description.abstractIn this paper the influence of doping level in AlGaN and GaN on the carriers surface density in a channel of modulation doped field effect transistors (MODFETs) has been investigated. The carriers concentration profile in the channel (including the position of its famous peak) as well as the surface density have been found. Our calculations have been based on the Wigner Distribution Function (WDF) formalism. Thermal emission at the hetero-interface as well as the penetration of carriers into undoped spacer layer has been taken into account. The results are in good agreement with the available experimental data.en
dc.publisherProceedings of the fourth Yugoslav Materials Research Society Conference (YUCOMAT IV)
dc.rightsrestrictedAccess
dc.sourceMaterials Science Forum
dc.subject2DEG densityen
dc.subjectcarrier concentration profileen
dc.subjectMODFETsen
dc.subjectquantum correctionen
dc.subjectthermal emissionen
dc.subjectWigner Distribution Functionen
dc.titleInfluence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channelen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage44
dc.citation.other413: 39-44
dc.citation.rankM22
dc.citation.spage39
dc.citation.volume413
dc.identifier.doi10.4028/www.scientific.net/msf.413.39
dc.identifier.rcubconv_7096
dc.identifier.scopus2-s2.0-0036926638
dc.identifier.wos000180730700008
dc.type.versionpublishedVersion


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