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dc.creatorRamović, Rifat M.
dc.creatorŠašić, Rajko
dc.creatorLukić, Petar M.
dc.date.accessioned2021-03-10T10:29:34Z
dc.date.available2021-03-10T10:29:34Z
dc.date.issued2006
dc.identifier.issn1454-4164
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/877
dc.description.abstractIn this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term included; this transport equation is a consequence of density matrix formalism and moment expansion of corresponding expressions. The achievements of this approach have been tested in the investigation of widely used semiconductor structures. The preliminary theoretical results have been compared with results available in the literature and previously formed knowledge related to this topic.en
dc.publisherNatl Inst Optoelectronics, Bucharest-Magurele
dc.rightsrestrictedAccess
dc.sourceJournal of Optoelectronics and Advanced Materials
dc.subjectcarriers' concentrationen
dc.subjectquantum wellen
dc.subjectquantum correctionen
dc.titleNovel approach to the investigation of carriers' concentration in various semiconductor structuresen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage1423
dc.citation.issue4
dc.citation.other8(4): 1418-1423
dc.citation.rankM22
dc.citation.spage1418
dc.citation.volume8
dc.identifier.pmid
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_technorep_877
dc.identifier.scopus2-s2.0-33748031733
dc.identifier.wos000239874400018
dc.type.versionpublishedVersion


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