New analytical HFET I-V characteristics model

Abstract

In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET physics. In the new model, most of the parameters have a clear, physical meaning. Presented model includes HFET carrier mobility model, as well as HFET electric field model. Temperature influence is included in the model too. This model is suitable for the design and simulation of different types of HFETs. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained results, available in literature.