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dc.creatorLukić, Petar M.
dc.creatorRamović, Rifat M.
dc.creatorŠašić, Rajko
dc.date.accessioned2021-03-10T10:30:09Z
dc.date.available2021-03-10T10:30:09Z
dc.date.issued2006
dc.identifier.issn2159-1660
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/886
dc.description.abstractIn this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model, simulations were performed. Obtained results are in very good agreement with the already known ones.en
dc.publisher2006 25th International Conference on Microelectronics, MIEL 2006
dc.rightsrestrictedAccess
dc.source2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
dc.titleA new threshold voltage analytical model of strained Si/SiGe MOSFETen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage475
dc.citation.other: 472-475
dc.citation.spage472
dc.identifier.doi10.1109/ICMEL.2006.1651004
dc.identifier.pmid
dc.identifier.rcubconv_6920
dc.identifier.scopus2-s2.0-77956550897
dc.type.versionpublishedVersion


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