A new threshold voltage analytical model of strained Si/SiGe MOSFET

dc.creator	Lukić, Petar M.
dc.creator	Ramović, Rifat M.
dc.creator	Šašić, Rajko
dc.date.accessioned	2021-03-10T10:30:09Z
dc.date.available	2021-03-10T10:30:09Z
dc.date.issued	2006
dc.identifier.issn	2159-1660
dc.identifier.uri	http://TechnoRep.tmf.bg.ac.rs/handle/123456789/886
dc.description.abstract	In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model, simulations were performed. Obtained results are in very good agreement with the already known ones.	en
dc.publisher	2006 25th International Conference on Microelectronics, MIEL 2006
dc.rights	restrictedAccess
dc.source	2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
dc.title	A new threshold voltage analytical model of strained Si/SiGe MOSFET	en
dc.type	article
dc.rights.license	ARR
dc.citation.epage	475
dc.citation.other	: 472-475
dc.citation.spage	472
dc.identifier.doi	10.1109/ICMEL.2006.1651004
dc.identifier.pmid
dc.identifier.scopus	2-s2.0-77956550897
dc.type.version	publishedVersion