2D model of pseudomorphic InGaAs/InAlAs HEMT's structure
Само за регистроване кориснике
1998
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
This paper presents the 2D model of the pseudomorphic InGaAs/InAlAs/InGaAs HEMT (High Electron Mobility Transistor) structure based on relevant physics. Together with parameters governed by the geometry and the producing technology of the device, it also takes into account the parasitic resistances of source and drain terminals and the influence of temperature on its operation. This fact makes the suggested model more general and more complete than previous ones. The corresponding numerical procedure for the determination of electric field and potential, as well as the transfer and output characteristics of the structure, has been designed and its simulation performed.
Кључне речи:
heterostructure / HEMT / pseudomorphic modelling / simulationИзвор:
Solid State Phenomena, 1998, 61-2, 207-210Издавач:
- Trans Tech-Scitec Publications Ltd, Durnten-Zurich
DOI: 10.4028/www.scientific.net/SSP.61-62.207
ISSN: 1012-0394
WoS: 000075589100037
[ Google Scholar ]Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Ramović, Rifat M. AU - Šašić, Rajko AU - Andrin, R PY - 1998 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/209 AB - This paper presents the 2D model of the pseudomorphic InGaAs/InAlAs/InGaAs HEMT (High Electron Mobility Transistor) structure based on relevant physics. Together with parameters governed by the geometry and the producing technology of the device, it also takes into account the parasitic resistances of source and drain terminals and the influence of temperature on its operation. This fact makes the suggested model more general and more complete than previous ones. The corresponding numerical procedure for the determination of electric field and potential, as well as the transfer and output characteristics of the structure, has been designed and its simulation performed. PB - Trans Tech-Scitec Publications Ltd, Durnten-Zurich T2 - Solid State Phenomena T1 - 2D model of pseudomorphic InGaAs/InAlAs HEMT's structure EP - 210 SP - 207 VL - 61-2 DO - 10.4028/www.scientific.net/SSP.61-62.207 ER -
@article{ author = "Ramović, Rifat M. and Šašić, Rajko and Andrin, R", year = "1998", abstract = "This paper presents the 2D model of the pseudomorphic InGaAs/InAlAs/InGaAs HEMT (High Electron Mobility Transistor) structure based on relevant physics. Together with parameters governed by the geometry and the producing technology of the device, it also takes into account the parasitic resistances of source and drain terminals and the influence of temperature on its operation. This fact makes the suggested model more general and more complete than previous ones. The corresponding numerical procedure for the determination of electric field and potential, as well as the transfer and output characteristics of the structure, has been designed and its simulation performed.", publisher = "Trans Tech-Scitec Publications Ltd, Durnten-Zurich", journal = "Solid State Phenomena", title = "2D model of pseudomorphic InGaAs/InAlAs HEMT's structure", pages = "210-207", volume = "61-2", doi = "10.4028/www.scientific.net/SSP.61-62.207" }
Ramović, R. M., Šašić, R.,& Andrin, R.. (1998). 2D model of pseudomorphic InGaAs/InAlAs HEMT's structure. in Solid State Phenomena Trans Tech-Scitec Publications Ltd, Durnten-Zurich., 61-2, 207-210. https://doi.org/10.4028/www.scientific.net/SSP.61-62.207
Ramović RM, Šašić R, Andrin R. 2D model of pseudomorphic InGaAs/InAlAs HEMT's structure. in Solid State Phenomena. 1998;61-2:207-210. doi:10.4028/www.scientific.net/SSP.61-62.207 .
Ramović, Rifat M., Šašić, Rajko, Andrin, R, "2D model of pseudomorphic InGaAs/InAlAs HEMT's structure" in Solid State Phenomena, 61-2 (1998):207-210, https://doi.org/10.4028/www.scientific.net/SSP.61-62.207 . .