The growth of sapphire single crystals
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Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. A critical crystal diameter dc = 20 mm and the critical rate of rotation ωc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to cone. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to cone. H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.
Keywords:
Czochralski technique / Etching / Growth / Sapphire / Single crystalSource:
Journal of the Serbian Chemical Society, 2001, 66, 6, 411-418Publisher:
- Serbian Chemical Society
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Tehnološko-metalurški fakultetTY - JOUR AU - Golubović, Aleksandar AU - Nikolić, Slobodanka AU - Djurić, Stevan AU - Valčić, Andreja PY - 2001 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5363 AB - Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. A critical crystal diameter dc = 20 mm and the critical rate of rotation ωc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to cone. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to cone. H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data. PB - Serbian Chemical Society T2 - Journal of the Serbian Chemical Society T1 - The growth of sapphire single crystals EP - 418 IS - 6 SP - 411 VL - 66 DO - 10.2298/jsc0106411g ER -
@article{ author = "Golubović, Aleksandar and Nikolić, Slobodanka and Djurić, Stevan and Valčić, Andreja", year = "2001", abstract = "Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. A critical crystal diameter dc = 20 mm and the critical rate of rotation ωc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to cone. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to cone. H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.", publisher = "Serbian Chemical Society", journal = "Journal of the Serbian Chemical Society", title = "The growth of sapphire single crystals", pages = "418-411", number = "6", volume = "66", doi = "10.2298/jsc0106411g" }
Golubović, A., Nikolić, S., Djurić, S.,& Valčić, A.. (2001). The growth of sapphire single crystals. in Journal of the Serbian Chemical Society Serbian Chemical Society., 66(6), 411-418. https://doi.org/10.2298/jsc0106411g
Golubović A, Nikolić S, Djurić S, Valčić A. The growth of sapphire single crystals. in Journal of the Serbian Chemical Society. 2001;66(6):411-418. doi:10.2298/jsc0106411g .
Golubović, Aleksandar, Nikolić, Slobodanka, Djurić, Stevan, Valčić, Andreja, "The growth of sapphire single crystals" in Journal of the Serbian Chemical Society, 66, no. 6 (2001):411-418, https://doi.org/10.2298/jsc0106411g . .