Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55-μm photodetector applications
Samo za registrovane korisnike
2000
Autori
Liu, Jianlin L.Radetić, Tamara
Tang, Yinsheng S.
Teng, D.
Jin, Gaolong
Luo, Y. H.
Wan, Jun
Gronsky, Ronald
Wang, Kang L.
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
A systematic study of Sb sufactant-mediated relaxed SiGe graded layers has been performed. The results have been compared
with those of relaxed SiGe layers grown at high temperatures, showing that the Sb-mediated SiGe graded layers have been
significantly improved both in surface smoothness and in threading dislocation density. We have investigated the grading rate
dependence on the resulting threading dislocation density and surface smoothness of as-grown Si Ge buffer layer samples. 0.5 0.5
With the use of Sb surfactant mediation, we have also fabricated high-quality Ge photo diodes, showing very low leaky current at
the reverse bias at 1 V.
Ključne reči:
Sb surfactant / SiGe graded buffers / Ge p-i-n photodiodesIzvor:
Thin Solid Films, 2000, 380, 1-2, 54-56Izdavač:
- Elsevier Sequoia SA
Finansiranje / projekti:
- US DOD/ONR MURI project on thermoelectrics
Institucija/grupa
Tehnološko-metalurški fakultetTY - JOUR AU - Liu, Jianlin L. AU - Radetić, Tamara AU - Tang, Yinsheng S. AU - Teng, D. AU - Jin, Gaolong AU - Luo, Y. H. AU - Wan, Jun AU - Gronsky, Ronald AU - Wang, Kang L. PY - 2000 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/7277 AB - A systematic study of Sb sufactant-mediated relaxed SiGe graded layers has been performed. The results have been compared with those of relaxed SiGe layers grown at high temperatures, showing that the Sb-mediated SiGe graded layers have been significantly improved both in surface smoothness and in threading dislocation density. We have investigated the grading rate dependence on the resulting threading dislocation density and surface smoothness of as-grown Si Ge buffer layer samples. 0.5 0.5 With the use of Sb surfactant mediation, we have also fabricated high-quality Ge photo diodes, showing very low leaky current at the reverse bias at 1 V. PB - Elsevier Sequoia SA T2 - Thin Solid Films T1 - Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55-μm photodetector applications EP - 56 IS - 1-2 SP - 54 VL - 380 DO - 10.1016/S0040-6090(00)01468-1 ER -
@article{ author = "Liu, Jianlin L. and Radetić, Tamara and Tang, Yinsheng S. and Teng, D. and Jin, Gaolong and Luo, Y. H. and Wan, Jun and Gronsky, Ronald and Wang, Kang L.", year = "2000", abstract = "A systematic study of Sb sufactant-mediated relaxed SiGe graded layers has been performed. The results have been compared with those of relaxed SiGe layers grown at high temperatures, showing that the Sb-mediated SiGe graded layers have been significantly improved both in surface smoothness and in threading dislocation density. We have investigated the grading rate dependence on the resulting threading dislocation density and surface smoothness of as-grown Si Ge buffer layer samples. 0.5 0.5 With the use of Sb surfactant mediation, we have also fabricated high-quality Ge photo diodes, showing very low leaky current at the reverse bias at 1 V.", publisher = "Elsevier Sequoia SA", journal = "Thin Solid Films", title = "Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55-μm photodetector applications", pages = "56-54", number = "1-2", volume = "380", doi = "10.1016/S0040-6090(00)01468-1" }
Liu, J. L., Radetić, T., Tang, Y. S., Teng, D., Jin, G., Luo, Y. H., Wan, J., Gronsky, R.,& Wang, K. L.. (2000). Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55-μm photodetector applications. in Thin Solid Films Elsevier Sequoia SA., 380(1-2), 54-56. https://doi.org/10.1016/S0040-6090(00)01468-1
Liu JL, Radetić T, Tang YS, Teng D, Jin G, Luo YH, Wan J, Gronsky R, Wang KL. Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55-μm photodetector applications. in Thin Solid Films. 2000;380(1-2):54-56. doi:10.1016/S0040-6090(00)01468-1 .
Liu, Jianlin L., Radetić, Tamara, Tang, Yinsheng S., Teng, D., Jin, Gaolong, Luo, Y. H., Wan, Jun, Gronsky, Ronald, Wang, Kang L., "Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55-μm photodetector applications" in Thin Solid Films, 380, no. 1-2 (2000):54-56, https://doi.org/10.1016/S0040-6090(00)01468-1 . .