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dc.creatorSong, David W.
dc.creatorShen, Weining-N.
dc.creatorDunn, Bruce
dc.creatorMoore, Caroline D.
dc.creatorGoorsky, Mark S.
dc.creatorRadetić, Tamara
dc.creatorGronsky, Ronald
dc.creatorChen, Gang
dc.date.accessioned2024-02-28T07:05:16Z
dc.date.available2024-02-28T07:05:16Z
dc.date.issued2004
dc.identifier.issn0003-6951
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/7283
dc.description.abstractThe thermal conductivity of nanoporous Bi thin films has been experimentally determined. Samples are fabricated by a liquid phase deposition, and their thermal conductivities are measured by a differential 3ω method. Nanoporous Bi thin films exhibit an order-of-magnitude reduction in thermal conductivity compared to that of solid films, most likely the result of a reduction in phonon mean free path. When porous Bi films are exposed to a hydrogen plasma, thermal conductivity measurements reveal no variation with extent of porosity, while electrical conductivity is much more sensitive to porosity, suggesting the possibility of independent control of these two intrinsic properties.sr
dc.language.isoensr
dc.publisherAIP Publishingsr
dc.relationDOD MURI program on thermoelectrics (ONR N00014-97-1-0516)sr
dc.rightsrestrictedAccesssr
dc.sourceApplied Physics Letterssr
dc.titleThermal conductivity of nanoporous bismuth thin filmssr
dc.typearticlesr
dc.rights.licenseARRsr
dc.citation.epage1885
dc.citation.issue11
dc.citation.spage1883
dc.citation.volume84
dc.identifier.doi10.1063/1.1682679
dc.identifier.scopus2-s2.0-1842738130
dc.type.versionpublishedVersionsr


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Приказ основних података о документу