A new threshold voltage analytical model of strained Si/SiGe MOSFET
Апстракт
In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones.
Извор:
2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, 505-+Издавач:
- IEEE, Electron Devices Soc & Reliability Group, New York
Институција/група
Tehnološko-metalurški fakultetTY - JOUR AU - Lukić, Petar M. AU - Ramović, Rifat M. AU - Šašić, Rajko PY - 2006 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/923 AB - In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones. PB - IEEE, Electron Devices Soc & Reliability Group, New York T2 - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings T1 - A new threshold voltage analytical model of strained Si/SiGe MOSFET EP - + SP - 505 UR - https://hdl.handle.net/21.15107/rcub_technorep_923 ER -
@article{ author = "Lukić, Petar M. and Ramović, Rifat M. and Šašić, Rajko", year = "2006", abstract = "In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones.", publisher = "IEEE, Electron Devices Soc & Reliability Group, New York", journal = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings", title = "A new threshold voltage analytical model of strained Si/SiGe MOSFET", pages = "+-505", url = "https://hdl.handle.net/21.15107/rcub_technorep_923" }
Lukić, P. M., Ramović, R. M.,& Šašić, R.. (2006). A new threshold voltage analytical model of strained Si/SiGe MOSFET. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings IEEE, Electron Devices Soc & Reliability Group, New York., 505-+. https://hdl.handle.net/21.15107/rcub_technorep_923
Lukić PM, Ramović RM, Šašić R. A new threshold voltage analytical model of strained Si/SiGe MOSFET. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:505-+. https://hdl.handle.net/21.15107/rcub_technorep_923 .
Lukić, Petar M., Ramović, Rifat M., Šašić, Rajko, "A new threshold voltage analytical model of strained Si/SiGe MOSFET" in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):505-+, https://hdl.handle.net/21.15107/rcub_technorep_923 .