Претраживање
Приказ резултата 1-1 од 1
Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
(IOP Publishing Ltd, Bristol, 2013)
Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different ...