Show simple item record

dc.creatorLukić, Petar M.
dc.creatorRamović, Rifat M.
dc.creatorŠašić, Rajko
dc.date.accessioned2021-03-10T10:38:03Z
dc.date.available2021-03-10T10:38:03Z
dc.date.issued2007
dc.identifier.issn0255-5476
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/1008
dc.description.abstractThe focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.en
dc.publisher8th Conference of the Yugoslav Materials Research Society
dc.rightsrestrictedAccess
dc.sourceMaterials Science Forum
dc.subjectSiGe MOSFETen
dc.subjecttransport characteristics modelen
dc.titleModeling and investigation of SiGe based MOSFET structure transport characteristicsen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage106
dc.citation.other555: 101-106
dc.citation.rankM23
dc.citation.spage101
dc.citation.volume555
dc.identifier.doi10.4028/0-87849-441-3.101
dc.identifier.pmid
dc.identifier.scopus2-s2.0-38349065190
dc.identifier.wos000249653700015
dc.type.versionpublishedVersion


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record