Conduction mechanism based model of organic field effect transistor structure

dc.creator	Šašić, Rajko
dc.creator	Lukić, Petar M.
dc.date.accessioned	2021-03-10T10:38:18Z
dc.date.available	2021-03-10T10:38:18Z
dc.date.issued	2007
dc.identifier.issn	0255-5476
dc.identifier.uri	http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1012
dc.description.abstract	Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.	en
dc.publisher	8th Conference of the Yugoslav Materials Research Society
dc.rights	restrictedAccess
dc.source	Materials Science Forum
dc.subject	carrier mobility model	en
dc.subject	electrical characteristics	en
dc.subject	organic TFT model	en
dc.subject	simulation	en
dc.title	Conduction mechanism based model of organic field effect transistor structure	en
dc.type	article
dc.rights.license	ARR
dc.citation.epage	130
dc.citation.other	555: 125-130
dc.citation.rank	M23
dc.citation.spage	125
dc.citation.volume	555
dc.identifier.doi	10.4028/0-87849-441-3.125
dc.identifier.pmid
dc.identifier.scopus	2-s2.0-38349078604
dc.identifier.wos	000249653700019
dc.type.version	publishedVersion

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