Influence of nonparabolicity on tunneling times in semiconductor structures
Abstract
Tunneling of a particle with energy-dependent effective mass through one-dimensional potential barrier is considered. For an arbitrary potential shape we find general relations between phase, group and dwell times, and finally derive explicit relations for the textbook case of a rectangular potential barrier. Accounting for the nonparabolicity is found to increase the group time by up to 30% in realistic structures, depending on the energy of incident particle.
Keywords:
quantum barrier / nonparabolicity / Tunneling timesSource:
Physics Letters A, 2007, 366, 1-2, 130-133Publisher:
- Elsevier Science Bv, Amsterdam
DOI: 10.1016/j.physleta.2007.01.050
ISSN: 0375-9601