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dc.creatorKočinac, Saša
dc.creatorMilanović, V.
dc.creatorIkonić, Z
dc.creatorIndjin, D.
dc.date.accessioned2021-03-10T10:47:39Z
dc.date.available2021-03-10T10:47:39Z
dc.date.issued2007
dc.identifier.issn0375-9601
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/1158
dc.description.abstractTunneling of a particle with energy-dependent effective mass through one-dimensional potential barrier is considered. For an arbitrary potential shape we find general relations between phase, group and dwell times, and finally derive explicit relations for the textbook case of a rectangular potential barrier. Accounting for the nonparabolicity is found to increase the group time by up to 30% in realistic structures, depending on the energy of incident particle.en
dc.publisherElsevier Science Bv, Amsterdam
dc.rightsrestrictedAccess
dc.sourcePhysics Letters A
dc.subjectquantum barrieren
dc.subjectnonparabolicityen
dc.subjectTunneling timesen
dc.titleInfluence of nonparabolicity on tunneling times in semiconductor structuresen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage133
dc.citation.issue1-2
dc.citation.other366(1-2): 130-133
dc.citation.rankM21
dc.citation.spage130
dc.citation.volume366
dc.identifier.doi10.1016/j.physleta.2007.01.050
dc.identifier.rcubconv_2846
dc.identifier.scopus2-s2.0-34247640053
dc.identifier.wos000247900800023
dc.type.versionpublishedVersion


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