In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.
Source:
2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings, 2008, 193-
TY - CONF
AU - Ramović, Rifat M.
AU - Lukić, Petar M.
AU - Šašić, Rajko
AU - Ostojić, Stanko M.
PY - 2008
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1294
AB - In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.
PB - IEEE, New York
C3 - 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
T1 - Analytical model of a Si TFT with cylindrical source and drain
EP -
SP - 193
DO - 10.1109/ICMEL.2008.4559256
ER -
@conference{
author = "Ramović, Rifat M. and Lukić, Petar M. and Šašić, Rajko and Ostojić, Stanko M.",
year = "2008",
abstract = "In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.",
publisher = "IEEE, New York",
journal = "2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings",
title = "Analytical model of a Si TFT with cylindrical source and drain",
pages = "-193",
doi = "10.1109/ICMEL.2008.4559256"
}
Ramović, R. M., Lukić, P. M., Šašić, R.,& Ostojić, S. M.. (2008). Analytical model of a Si TFT with cylindrical source and drain. in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
IEEE, New York., 193-.
https://doi.org/10.1109/ICMEL.2008.4559256
Ramović RM, Lukić PM, Šašić R, Ostojić SM. Analytical model of a Si TFT with cylindrical source and drain. in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings. 2008;:193-.
doi:10.1109/ICMEL.2008.4559256 .
Ramović, Rifat M., Lukić, Petar M., Šašić, Rajko, Ostojić, Stanko M., "Analytical model of a Si TFT with cylindrical source and drain" in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings (2008):193-,
https://doi.org/10.1109/ICMEL.2008.4559256 . .
