Analytical model of a Si TFT with cylindrical source and drain

dc.creator	Ramović, Rifat M.
dc.creator	Lukić, Petar M.
dc.creator	Šašić, Rajko
dc.creator	Ostojić, Stanko M.
dc.date.accessioned	2021-03-10T10:56:28Z
dc.date.available	2021-03-10T10:56:28Z
dc.date.issued	2008
dc.identifier.isbn	978-142441882-4
dc.identifier.uri	http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1294
dc.description.abstract	In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.	en
dc.publisher	IEEE, New York
dc.rights	restrictedAccess
dc.source	2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
dc.title	Analytical model of a Si TFT with cylindrical source and drain	en
dc.type	conferenceObject
dc.rights.license	ARR
dc.citation.epage
dc.citation.other	: 193-
dc.citation.spage	193
dc.identifier.doi	10.1109/ICMEL.2008.4559256
dc.identifier.scopus	2-s2.0-51749124483
dc.identifier.wos	000257432600039
dc.type.version	publishedVersion