Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance

Abstract

In this paper, the results of investigation and modeling one of the most frequently used electron component - MOSFET (Metal Oxide Semiconductor Field Effect Transistor), made of SiC, are presented. At the begging, very good characteristics and advantages that SiC has, in comparison with standard electron materials, are exposed. Than, the most important steps, in SiC MOSFET current-voltage characteristics development are proposed. Based on that models, new analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance are obtained. Achieved models describe complex physics phenomena that exist in SiC MOSFET very accurate and, at the same time, proposed models are relatively simple. Results obtained by using proposed models are in very good agreement with already known ones.

U ovom radu su prikazani rezultati istraživanja i modelovanja karakteristika jedne od danas najčešće korišćenih elektronskih komponenti MOSFETa (Metal Oxide Semiconductor Field Effect Transistor) izrađenog na bazi SiC (silicijum karbida). Najpre je ukazano na veoma dobre karakteristike i prednosti koje SiC ima u odnosu na standardne materijale koji se koriste u mikroelektronici. Zatim su predloženi najznačajniji koraci u razvijanju analitičkih modela strujno-naponskih karakteristika SiC MOSFET strukture. Na osnovu ovih modela, postavljeni su novi analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu ovog tranzistora. Korišćenjem predloženih modela izvršene su simulacije. Dobijeni rezultati su u visokom stepenu saglasni sa do sada poznatim i publikovanim.