The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.
Keywords:
Analytical model / Spatial carriers distribution / Surrounding-gate MOSFET / Quantum effects / Transport equation
Source:
Journal of Optoelectronics and Advanced Materials, 2010, 12, 5, 1161-1164
Publisher:
Natl Inst Optoelectronics, Bucharest-Magurele
Funding / projects:
Serbian Ministry of Science and Technological Development
TY - JOUR
AU - Šašić, Rajko
AU - Lukić, Petar M.
AU - Ostojić, Stanko M.
AU - Alkoash, Abed Alkhem
PY - 2010
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1581
AB - The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.
PB - Natl Inst Optoelectronics, Bucharest-Magurele
T2 - Journal of Optoelectronics and Advanced Materials
T1 - The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs
EP - 1164
IS - 5
SP - 1161
VL - 12
UR - https://hdl.handle.net/21.15107/rcub_technorep_1581
ER -
@article{
author = "Šašić, Rajko and Lukić, Petar M. and Ostojić, Stanko M. and Alkoash, Abed Alkhem",
year = "2010",
abstract = "The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs",
pages = "1164-1161",
number = "5",
volume = "12",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1581"
}
Šašić, R., Lukić, P. M., Ostojić, S. M.,& Alkoash, A. A.. (2010). The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 12(5), 1161-1164.
https://hdl.handle.net/21.15107/rcub_technorep_1581
Šašić R, Lukić PM, Ostojić SM, Alkoash AA. The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials. 2010;12(5):1161-1164.
https://hdl.handle.net/21.15107/rcub_technorep_1581 .
Šašić, Rajko, Lukić, Petar M., Ostojić, Stanko M., Alkoash, Abed Alkhem, "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs" in Journal of Optoelectronics and Advanced Materials, 12, no. 5 (2010):1161-1164,
https://hdl.handle.net/21.15107/rcub_technorep_1581 .
