The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs
Apstrakt
The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.
Ključne reči:
Analytical model / Spatial carriers distribution / Surrounding-gate MOSFET / Quantum effects / Transport equationIzvor:
Journal of Optoelectronics and Advanced Materials, 2010, 12, 5, 1161-1164Izdavač:
- Natl Inst Optoelectronics, Bucharest-Magurele
Finansiranje / projekti:
- Serbian Ministry of Science and Technological Development
Institucija/grupa
Tehnološko-metalurški fakultetTY - JOUR AU - Šašić, Rajko AU - Lukić, Petar M. AU - Ostojić, Stanko M. AU - Alkoash, Abed Alkhem PY - 2010 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1581 AB - The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters. PB - Natl Inst Optoelectronics, Bucharest-Magurele T2 - Journal of Optoelectronics and Advanced Materials T1 - The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs EP - 1164 IS - 5 SP - 1161 VL - 12 UR - https://hdl.handle.net/21.15107/rcub_technorep_1581 ER -
@article{ author = "Šašić, Rajko and Lukić, Petar M. and Ostojić, Stanko M. and Alkoash, Abed Alkhem", year = "2010", abstract = "The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.", publisher = "Natl Inst Optoelectronics, Bucharest-Magurele", journal = "Journal of Optoelectronics and Advanced Materials", title = "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs", pages = "1164-1161", number = "5", volume = "12", url = "https://hdl.handle.net/21.15107/rcub_technorep_1581" }
Šašić, R., Lukić, P. M., Ostojić, S. M.,& Alkoash, A. A.. (2010). The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials Natl Inst Optoelectronics, Bucharest-Magurele., 12(5), 1161-1164. https://hdl.handle.net/21.15107/rcub_technorep_1581
Šašić R, Lukić PM, Ostojić SM, Alkoash AA. The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials. 2010;12(5):1161-1164. https://hdl.handle.net/21.15107/rcub_technorep_1581 .
Šašić, Rajko, Lukić, Petar M., Ostojić, Stanko M., Alkoash, Abed Alkhem, "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs" in Journal of Optoelectronics and Advanced Materials, 12, no. 5 (2010):1161-1164, https://hdl.handle.net/21.15107/rcub_technorep_1581 .