Analytical model of MIS structure in electron devices

Abstract

In this paper the new analytical model of MIS (Metal-Insulator -Semiconductor) structure, in microelectron devices, is proposed. Presented model is relatively simple and, at the same time, the results obtained by the proposed model are in good agreement with already known ones. Developed model is modular, thus it can easily be analyzed, tested and eventually changed. Special model for carriers mobility is also proposed. The mobility dependence on temperature is also included in the proposed mobility model and therefore, temperature influence on MIS behavior. On the bases of the model that is presented, algorithm was made and simulations of electrical field potential distribution and carriers concentration in semiconductor layer of MIS structure, under influence of DC voltage, were performed. Obtained results are analyzed and presented in graphical form.

Metal-izolator-poluprovodnik struktura (MIS -Metal-Insulator-Semiconductor struktura) je sastavni deo najvećeg broja savremenih elektronskih komponenti i naprava. Otuda istraživanje i analiziranje fizičkih procesa koji se odvijaju u pomenutoj strukturi ima fundamentalan značaj. U ovom radu razvijen je analitički model električnog polja, potencijala i koncentracije slobodnih nosilaca naelektrisanja u poluprovodničkom sloju (podlozi) MIS strukture. Pretpostavljeno je da su slojevi metala i izolatora veoma tanki, što odgovara standardima koji se koriste prilikom izrade savremenih elektronskih naprava. Na osnovu predloženog modela, izvršene su simulacije raspodele električnih karakteristika koje nastaju pod uticajem jednosmernog napona na metalnom sloju. Dobijeni rezultati su prikazani grafički i analizirani.