Short-circuit oxygen diffusion in thermally grown silica layer
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2010
Authors
Gligorijević, BojanSchmidt, Harald
Radović, Nenad
Davidović, Milorad
Kutin, Marina
Janićijević, Aco
Article (Published version)
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Amorphous polymer-derived Si-C-N ceramics can be doped with different elements (Al, B etc.) through various pre-ceramic polymer routes. Thus, controlling of the high temperature oxidation resistance can be achieved on an atomic level. An important factor for silica layer growth is oxygen diffusion in protective thermally grown layers. In order to get insight of the oxygen diffusion mechanism, analysis should include both, bulk and short-circuit diffusion. XRD measurements of oxidized Si-C-N and SiC revealed the possibility that oxide layers were fully crystallized and are composed of nano-sized cristobalite-like grains. Secondary ion mass spectrometry depth profile analysis after (18)O(2)-(16)O(2) isotope exchange experiments on oxidized SiC indicated that short-circuit diffusion is probably grain boundary diffusion of molecular oxygen.
Keywords:
Oxygen diffusion / cristobalite layer / grain boundary / isotope exchange / SIMSSource:
International Journal of Modern Physics B, 2010, 24, 6-7, 682-694Publisher:
- World Scientific Publ Co Pte Ltd, Singapore
Funding / projects:
DOI: 10.1142/S0217979210064307
ISSN: 0217-9792
WoS: 000275932300006
Scopus: 2-s2.0-77951695736
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Tehnološko-metalurški fakultetTY - JOUR AU - Gligorijević, Bojan AU - Schmidt, Harald AU - Radović, Nenad AU - Davidović, Milorad AU - Kutin, Marina AU - Janićijević, Aco PY - 2010 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1686 AB - Amorphous polymer-derived Si-C-N ceramics can be doped with different elements (Al, B etc.) through various pre-ceramic polymer routes. Thus, controlling of the high temperature oxidation resistance can be achieved on an atomic level. An important factor for silica layer growth is oxygen diffusion in protective thermally grown layers. In order to get insight of the oxygen diffusion mechanism, analysis should include both, bulk and short-circuit diffusion. XRD measurements of oxidized Si-C-N and SiC revealed the possibility that oxide layers were fully crystallized and are composed of nano-sized cristobalite-like grains. Secondary ion mass spectrometry depth profile analysis after (18)O(2)-(16)O(2) isotope exchange experiments on oxidized SiC indicated that short-circuit diffusion is probably grain boundary diffusion of molecular oxygen. PB - World Scientific Publ Co Pte Ltd, Singapore T2 - International Journal of Modern Physics B T1 - Short-circuit oxygen diffusion in thermally grown silica layer EP - 694 IS - 6-7 SP - 682 VL - 24 DO - 10.1142/S0217979210064307 ER -
@article{ author = "Gligorijević, Bojan and Schmidt, Harald and Radović, Nenad and Davidović, Milorad and Kutin, Marina and Janićijević, Aco", year = "2010", abstract = "Amorphous polymer-derived Si-C-N ceramics can be doped with different elements (Al, B etc.) through various pre-ceramic polymer routes. Thus, controlling of the high temperature oxidation resistance can be achieved on an atomic level. An important factor for silica layer growth is oxygen diffusion in protective thermally grown layers. In order to get insight of the oxygen diffusion mechanism, analysis should include both, bulk and short-circuit diffusion. XRD measurements of oxidized Si-C-N and SiC revealed the possibility that oxide layers were fully crystallized and are composed of nano-sized cristobalite-like grains. Secondary ion mass spectrometry depth profile analysis after (18)O(2)-(16)O(2) isotope exchange experiments on oxidized SiC indicated that short-circuit diffusion is probably grain boundary diffusion of molecular oxygen.", publisher = "World Scientific Publ Co Pte Ltd, Singapore", journal = "International Journal of Modern Physics B", title = "Short-circuit oxygen diffusion in thermally grown silica layer", pages = "694-682", number = "6-7", volume = "24", doi = "10.1142/S0217979210064307" }
Gligorijević, B., Schmidt, H., Radović, N., Davidović, M., Kutin, M.,& Janićijević, A.. (2010). Short-circuit oxygen diffusion in thermally grown silica layer. in International Journal of Modern Physics B World Scientific Publ Co Pte Ltd, Singapore., 24(6-7), 682-694. https://doi.org/10.1142/S0217979210064307
Gligorijević B, Schmidt H, Radović N, Davidović M, Kutin M, Janićijević A. Short-circuit oxygen diffusion in thermally grown silica layer. in International Journal of Modern Physics B. 2010;24(6-7):682-694. doi:10.1142/S0217979210064307 .
Gligorijević, Bojan, Schmidt, Harald, Radović, Nenad, Davidović, Milorad, Kutin, Marina, Janićijević, Aco, "Short-circuit oxygen diffusion in thermally grown silica layer" in International Journal of Modern Physics B, 24, no. 6-7 (2010):682-694, https://doi.org/10.1142/S0217979210064307 . .