An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs

Abstract

The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.