An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs
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2011
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The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.
Ključne reči:
I-V Analytical Model / Surrounding-Gate MOSFET / Mobility DegradationIzvor:
Journal of Computational and Theoretical Nanoscience, 2011, 8, 1, 47-50Izdavač:
- Amer Scientific Publishers, Stevenson Ranch
Finansiranje / projekti:
- Serbian Ministry of Science and Technological Development
DOI: 10.1166/jctn.2011.1657
ISSN: 1546-1955
WoS: 000289698000009
Scopus: 2-s2.0-84856923235
Institucija/grupa
Tehnološko-metalurški fakultetTY - JOUR AU - Alkoash, Abed Alkhem AU - Šašić, Rajko AU - Ostojić, Stanko M. AU - Lukić, Petar M. PY - 2011 UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1956 AB - The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well. PB - Amer Scientific Publishers, Stevenson Ranch T2 - Journal of Computational and Theoretical Nanoscience T1 - An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs EP - 50 IS - 1 SP - 47 VL - 8 DO - 10.1166/jctn.2011.1657 ER -
@article{ author = "Alkoash, Abed Alkhem and Šašić, Rajko and Ostojić, Stanko M. and Lukić, Petar M.", year = "2011", abstract = "The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.", publisher = "Amer Scientific Publishers, Stevenson Ranch", journal = "Journal of Computational and Theoretical Nanoscience", title = "An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs", pages = "50-47", number = "1", volume = "8", doi = "10.1166/jctn.2011.1657" }
Alkoash, A. A., Šašić, R., Ostojić, S. M.,& Lukić, P. M.. (2011). An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs. in Journal of Computational and Theoretical Nanoscience Amer Scientific Publishers, Stevenson Ranch., 8(1), 47-50. https://doi.org/10.1166/jctn.2011.1657
Alkoash AA, Šašić R, Ostojić SM, Lukić PM. An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs. in Journal of Computational and Theoretical Nanoscience. 2011;8(1):47-50. doi:10.1166/jctn.2011.1657 .
Alkoash, Abed Alkhem, Šašić, Rajko, Ostojić, Stanko M., Lukić, Petar M., "An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs" in Journal of Computational and Theoretical Nanoscience, 8, no. 1 (2011):47-50, https://doi.org/10.1166/jctn.2011.1657 . .