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dc.creatorAlkoash, Abed Alkhem
dc.creatorŠašić, Rajko
dc.creatorOstojić, Stanko M.
dc.creatorLukić, Petar M.
dc.date.accessioned2021-03-10T11:39:28Z
dc.date.available2021-03-10T11:39:28Z
dc.date.issued2011
dc.identifier.issn1546-1955
dc.identifier.urihttp://TechnoRep.tmf.bg.ac.rs/handle/123456789/1956
dc.description.abstractThe paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.en
dc.publisherAmer Scientific Publishers, Stevenson Ranch
dc.relationSerbian Ministry of Science and Technological Development
dc.rightsrestrictedAccess
dc.sourceJournal of Computational and Theoretical Nanoscience
dc.subjectI-V Analytical Modelen
dc.subjectSurrounding-Gate MOSFETen
dc.subjectMobility Degradationen
dc.titleAn Improvement of Analytical I-V Model for Surrounding-Gate MOSFETsen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage50
dc.citation.issue1
dc.citation.other8(1): 47-50
dc.citation.rankM23
dc.citation.spage47
dc.citation.volume8
dc.identifier.doi10.1166/jctn.2011.1657
dc.identifier.rcubconv_3571
dc.identifier.scopus2-s2.0-84856923235
dc.identifier.wos000289698000009
dc.type.versionpublishedVersion


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